Times are sure changing as well as technology. We’ve gone from 3G to 4G, GSM to UMTS, Edge to 3G and then HSPA+, single-core to dual-core processors and the list just keeps going on. Well, with the next gen Galaxy Tablet in mind, Samsung is continuing the tradition of innovation by introducing their new line of memory modules. Dynamic random-access memory (DRAM) is improving more and more on a daily basis. With this new module, Samsung has developed a 1GB DRAM module with a wide I/O interface capable of interacting with both tablets and smart phones, transmitting data at 12.8 GB/sec. That is music to our ears.
Here’s to the greatest words ever spoken, “faster is better”. Compared to the LPDDR2 DRAM chip set, this is an eightfold increase in bandwidth. Samsung has also trimmed power consumption by 87 percent while successfully doing this. This is extremely impressive and something to look forward to as new and innovative handsets and tablets join the market by Samsung. Samsung increased data transfer rates by using a new wide I/O DRAM which encompasses a 512 pin system, much larger than the 32 pin set used in previous chips. The folks over at Engadget have reported that Samsung hopes to provide 20nm-class 4GB wide I/O mobile DRAM by the year 2013. Here’s to hoping the technology reaches new mobile products much much sooner than that. As the technology begins to unfold more, we’ll definitely be reporting it back for you all, so don’t forget to check back in with Talk Android. What do you think? Is an attainable 12.8 GB/sec fast enough for you?
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